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Effect of rare-earth doping inRCrSb3(R=La, Pr, Sm, and Gd)
Physical Review B
We report on the electrical resistivity and magnetic susceptibility of La or Gd doped RCrSb 3 ͑R = La, Pr, Sm, and Gd͒. Single crystals were grown by increasing the nominal dopant by 25%. In general, two magnetic ordering transitions are found, T c1 is attributed to ferromagnetic ordering of the itinerant Cr sublattice, and, at lower temperatures, T c2 is attributed to ordering of the localized rare-earth sublattice. Alloying on the rare-earth site varies the de Gennes factor, DG= ͑g −1͒ 2 J͑Jdoi:10.1103/physrevb.73.024421 fatcat:mtry6zgi5nacfcbpzycgpvoqli