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Near sputter-threshold GaSb nanopatterning
2013
Journal of Applied Physics
Nanopatterning at sputter-threshold energies with Ar irradiation of GaSb (100) surfaces is presented. Comparison with high-energy irradiations up to 1000 eV is conducted measuring in-situ the composition evolution over irradiation time at early stages (e.g., <10 17 cm À2 ) and up to nanostructure saturation (e.g., $10 18 cm À2 ). Low-energy irradiation is conducted for energies between 15-100 eV and a low-aspect ratio nanostructured dot formation is found. Furthermore, the role of oxide on GaSb
doi:10.1063/1.4820261
fatcat:jzxm7jznqzgn5kkyagqj7tfnvy