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Two-dimensional modeling the static parameters for a submicron field-effect transistor
2009
Semiconductor Physics, Quantum Electronics & Optoelectronics
A comparison of two different models for simulation of submicron GaAs MESFETs static characteristics has been made. A new two-dimensional numerical model is presented to investigate the submicron field-effect transistor characteristics, the influence of the geometry of the component, like the inter-electrode distance, on the capacities. All simulation revealed the existence of a high contact electric field near the gate, which creates a depopulated zone around the gate, but the preceding
doi:10.15407/spqeo12.04.417
fatcat:gl6yynquc5b6lkxajmym2aquby