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Logic CMOS-based RF technology is introduced for a 10-Gb transceiver in which active and passive RF devices have been realized in a single chip. RF nMOS of 115-GHz , 100-GHz max , and sub-1.0-dB NF min at 10 GHz have been fabricated by aggressive device scaling and layout optimization. High-Q MiM capacitor and spiral Cu inductors have been successfully implemented in the same chip by 0.13-m low-K/Cu back end of integration line technology. Core 1.0 V MOS and/or junction varactors for VCO at 10doi:10.1109/tsm.2006.879415 fatcat:2crox7lgorexzcwdfz2rcoz2ky