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Frame-transfer CMOS active pixel sensor with pixel binning
1997
IEEE Transactions on Electron Devices
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The first frame-transfer CMOS active pixel sensor (APS) is reported. The sensor architecture integrates an array of active pixels with an array of passive memory cells. Charge integration amplifier-based readout of the memory cells permits binning of pixels for variable resolution imaging. A 32 2 32 element prototype sensor with 24-m pixel pitch was fabricated in 1.2-m CMOS and demonstrated.
doi:10.1109/16.628834
fatcat:cjedqj4qabh6zllq4hyw3wm3au