We report the recent progress of GaN-based VCSELs with two different laser structures. One is a hybrid cavity structure comprised an epitaxial AlN/GaN DBR, an InGaN/GaN MQW active region and a top dielectric DBR. Another is a dielectric cavity structure comprised an InGaN/GaN MQW layer sandwiched by two dielectric DBRs. Both lasers achieved laser action under optical pumping at the room temperature with narrow linewidth. The detailed characteristics of VCSELs will be reported. The status of the

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... electrically pumped VCSEL will also be presented. Downloaded From: http://proceedings.spiedigitallibrary.org/ on 04/26/2014 Terms of Use: http://spiedl.org/terms Proc. of SPIE Vol. 6766 67660G-3 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 04/26/2014 Terms of Use: http://spiedl.org/terms 13.56 MHz. After removing the etching mask, we re-deposited and patterned a 0.2 µm-thick SiN x layer to define a 390 395 400 405 410 415 420 425 430 435 440 Emission intensity (a.u.) Wavelength (nm) 400 405 410 415 420 425 E=0.25Eth Intensity (a.u.) Wavelength (nm) 1.13 Eth 0.25 Eth Eth FWHM~0.25 nm 100 150 200 250 300 350 0 10 20 30 40 50 Emission intensity (a.u.) Excitation energy (nJ/pulse) Proc. of SPIE Vol. 6766 67660G-9 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 04/26/2014 Terms of Use: http://spiedl.org/terms