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Fabrication of Metal-Ferroelectric-Silicon Structure by Layer Transfer via Wafer Bonding
The paper presents fabrication of metal-ferroelectric-silicon structures by a layer transfer process via direct wafer bonding. PZT and SBT ferroelectric thin films were deposited by chemical solution deposition on 3 Pt-coated silicon wafers and subsequently crystallised by conventional thermal annealing. The ferroelectric films were polished by standard chemical mechanical polishing in order to decrease the surface roughness under 1 nm RMS and to achieve the bonding conditions. Thedoi:10.1080/00150190390222772 fatcat:yndedk2fvnbupj4kxwkcebbx4i