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Miniaturization of CMOS
2019
Micromachines
When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today's 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process
doi:10.3390/mi10050293
pmid:31052223
pmcid:PMC6563067
fatcat:5b2mryaaebhbbfvtu2vyzwwvr4