Miniaturization of CMOS

Henry H. Radamson, Xiaobin He, Qingzhu Zhang, Jinbiao Liu, Hushan Cui, Jinjuan Xiang, Zhenzhen Kong, Wenjuan Xiong, Junjie Li, Jianfeng Gao, Hong Yang, Shihai Gu (+4 others)
2019 Micromachines  
When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today's 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process
more » ... e been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.
doi:10.3390/mi10050293 pmid:31052223 pmcid:PMC6563067 fatcat:5b2mryaaebhbbfvtu2vyzwwvr4