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Journal of Physics: Materials
We present a transfer-free process for the rapid growth of graphene on hexagonal boron nitride (h-BN) flakes via chemical vapor deposition. The growth of graphene on top of h-BN flakes is promoted by the adjacent copper catalyst. Full coverage of half-millimeter-sized h-BN crystals is demonstrated. The proximity of the copper catalyst ensures high-yield with a growth rate exceeding 2 μm min −1 , which is orders of magnitude above what was previously reported on h-BN and approaches the growthdoi:10.1088/2515-7639/aac66e fatcat:kalhfjxttzfqbmpuy4tkn6yqle