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Modifying threshold voltages to n- and p- type FinFETs by work function metal stacks
IEEE Open Journal of Nanotechnology
High-k metal gate technology improves the performance and reduces the gate leakage current of metal-oxide-semiconductor field-effect transistors (MOSFETs). This study investigated four different work function metal (WFM) stacks in the gate of fin field-effect transistors (FinFETs) on the same substrate. These devices not only successfully produced distinct levels of threshold voltages (|V t |) but also converted n-to p-type features merely by adding p-type WFM in the gate of the MOSFETs. All ofdoi:10.1109/ojnano.2021.3109897 fatcat:4vgd7wf7prhsbizeslw2zqljdi