Modifying threshold voltages to n- and p- type FinFETs by work function metal stacks

Wen-Teng Chang, Meng-His Li, Chun-Hao Hsu, Wen-Chin Lin, Wen-Kuan Yeh
2021 IEEE Open Journal of Nanotechnology  
High-k metal gate technology improves the performance and reduces the gate leakage current of metal-oxide-semiconductor field-effect transistors (MOSFETs). This study investigated four different work function metal (WFM) stacks in the gate of fin field-effect transistors (FinFETs) on the same substrate. These devices not only successfully produced distinct levels of threshold voltages (|V t |) but also converted n-to p-type features merely by adding p-type WFM in the gate of the MOSFETs. All of
more » ... the devices satisfied short-channel effects with shrinking channel length. The gate-to-body electric field induced drain leakage due to the nature of bulk FinFETs. However, the n-and p-type gate stacks presented different gate current leakage. For reliability, hot carrier injection (HCI) could have a higher reliability impact than the negative-bias temperature instability (NBTI) for p-MOSFET, although the stress voltage of HCI was roughly half that of the NBTI test. This multi-threshold voltage tuning allows designers to design CMOS and choose the trade-off between low power consumption and high performance on the same platform. Index Terms-work function metal, threshold voltage tuning, energy-dispersive X-ray spectroscopy, FinFETs, reliability Modifying threshold voltages to n-and p-type FinFETs by work function metal stacks
doi:10.1109/ojnano.2021.3109897 fatcat:4vgd7wf7prhsbizeslw2zqljdi