Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays

A. P. Craig, C. J. Reyner, A. R. J. Marshall, D. L. Huffaker
2014 Applied Physics Letters  
Origin of dark counts in In 0.53 Ga 0.47 As ∕ In 0.52 Al 0.48 As avalanche photodiodes operated in Geiger mode Appl. Phys. Lett. 86, 063505 (2005); 10.1063/1.1861498 1.31 μm GaAsSb resonant-cavity-enhanced separate absorption, charge and multiplication avalanche photodiodes with low noise
doi:10.1063/1.4879848 fatcat:iwl4aehczjgrnghmvwowgg2eqq