Vapor-Liquid-Solid Growth of Bi2O2Se Nanoribbons for High-Performance Transistors
Congwei Tan, 1 北京大学化学与分子工程学院,北京分子科学国家研究中心,北京纳米碳科学与工程中心,纳米化学中心,北京 100871,1 Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China, Mengshi Yu, Shipu Xu, Jinxiong Wu, Shulin Chen, Yan Zhao, Cong Liu, Yichi Zhang, Teng Tu, Tianran Li, Peng Gao
(+3 others)
2020
Wuli huaxue xuebao
Nanostructured bismuth oxyselenide (Bi2O2Se) semiconductor, a two-dimensional (2D) materials with highmobility, air-stability, and tunable bandgap, has recently emerged as a candidate of channel material for future digital (electronic and optoelectronic) applications. In terms of material morphology, some basic issues will be addressed when a twodimensional layered crystal is shaped into a one-dimensional (1D) geometry due to size effect; these include the spaceconfined transport in a plane,
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... ch leads to dramatic changes in electronic, optical, and thermal properties. These novel 1D nanostructures with unique properties are an optimal choice for fabricating next-generation integrated circuits and functional devices within the nanometer scale such as gate-all-around field-effect transistors, single-electron transistors, chemical sensors, and THz detectors. As one of the high-mobility 2D semiconductor, 1D high-quality Bi2O2Se nanoribbons could be promising for applications in high-performance transistors; however, their synthesis has not been completely developed yet. In our study, we report on the facile growth of Bi2O2Se nanoribbons on mica substrates via a bismuthcatalyzed vapor-liquid-solid (VLS) mechanism. The preparation of Bi2O2Se nanoribbons is based on a previous work that emphasized on the oxidation of Bi2Se3 in a chemical vapor deposition (CVD) system and the use of bismuth (Bi) particles as the precursor of Bi catalysis. The morphology, composition, and structure of the as-grown Bi2O2Se nanoribbons were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM), as well as other methods. For a Bi mediated VLS growth process, the growth of Bi2O2Se nanoribbons can be self-assembled; further, in this process, as-grown epitaxial Bi2O2Se nanoribbons are free-standing with out-of-plane morphology on the mica substrate. Additionally, combining the spherical aberration corrected transmission electron microscope (ACTEM) and selected electron diffraction (SAED) methods, we discovered that the assynthesized Bi2O2Se nanoribbons were single crystalline with high quality. We further investigated the controllable growth for domain size by optimizing the growth temperature of the Bi2O2Se nanoribbons. As-synthesized single-crystal Bi2O2Se nanoribbons have widths in the range of 100 nm to 20 μm and lengths in the sub-millimeter range. By employing a polymer poly(methyl methacrylate) (PMMA) assisted clean transfer method with the assistance of deionized water, the Bi2O2Se nanoribbons can be easily transferred onto a SiO2/Si substrate. Fabricated into the top-gated field-effect device, the Bi2O2Se nanoribbon sample (transferred to the SiO2/Si substrate) exhibited high electronic performances; these included a high electron mobility of ∼220 cm 2 •V −1 •s −1 at room temperature, good switching behavior with on/off ratio of >10 6 , and high on current density of ∼42 μA•μm −1 at a channel length of 10 μm. Therefore, Bi2O2Se nanoribbons are expected to be a promising materials for building high-performance transistors in the future.
doi:10.3866/pku.whxb201908038
fatcat:54ulvk6gmvbnre3ybvnlpspkui
