Fabrication of tunneling dielectric thin-film transistor with very thin SiNx films onto source and drain

Naoto Matsuo, Atsushi Fukushima, Kensaku Ohkura, Akira Heya, Shin Yokoyama
2007 IEICE Electronics Express  
Tunneling Dielectric Thin-Film Transistor (TDTFT), which was proposed to reduce the gate-off current by utilizing a tunneling effect, was fabricated in a bottom-gate structure. For the tunneling dielectric, a 1.7-nm-thick SiN x film was deposited onto the source and drain by a low-pressure chemical vapor deposition (LPCVD) method. The gate-off current of the TDTFT was reduced less than 1/10 in comparison with a conventional TFT. Although the subthreshold characteristics and the g m were
more » ... he g m were degraded due to the tunnel resistance, it will be compensated by further thinning of SiN x film or using the material with the barrier height lower than SiN x .
doi:10.1587/elex.4.442 fatcat:clr2gar4kjdzjgfy65s2s75oa4