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The piezoresistive properties of single-crystalline silicon nanofilms are studied. Resistors were fabricated on 130nm thick SOIsilicon and measurements indicate that the conductivity is extremely sensitive to substrate bias and can therefore be controlled by varying the backside potential. Another important parameter is the resistivity time drift. Long time measurements show a drastic variation in the resistance. Not even after several hours of measurement is steady state reached. The drift isdoi:10.1016/j.proche.2009.07.020 fatcat:n7szg7czpvawvmf6p3yshhbgga