Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon

L.I. Datsenko, Institute of the Semiconductors Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 45, 03028 Kyiv, Ukraine
2001 Semiconductor Physics, Quantum Electronics & Optoelectronics  
Good agreement between the two groups of the r and n parameters of microdefects (precipitates) was shown for some GaAs film (r 1 = 3.5 µm, n 1 = 4.3⋅10 6 cm -3 ; r 2 = 4.8 µm, n 2 = 9.4⋅10 6 cm -3 ) . Parameter ∆ = 0.009 (Ga excess) was determined too.
doi:10.15407/spqeo4.03.146 fatcat:k3rw5qqzmzfhbeh4m2es36ejsy