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HF-HNO3-H2SO4/H2O Mixtures for Etching Multicrystalline Silicon Surfaces: Formation of NO2 +, Reaction Rates and Surface Morphologies
2011
Zeitschrift für Naturforschung. B, A journal of chemical sciences
The reaction behavior of HF-HNO3-H2O etching mixtures, which are frequently used for texturing silicon surfaces, is significantly influenced by the addition of sulfuric acid. For high concentrations of sulfuric acid, nitronium ions NO2+ ions have been detected by means of 14N NMR spectroscopy, and results of Raman spectroscopic investigation have allowed the quantification of the nitronium ions. Maximum etching rates of 4000 - 5000 nm s−1 are reached for HF (40 %)-HNO3 (65%)-H2SO4 (97%)
doi:10.1515/znb-2011-0208
fatcat:kemxtnfs2jdu3b6zxorwn5d6wu