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We present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature-dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques, we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negativedoi:10.1007/s10825-020-01505-6 fatcat:kegceqkapjbshbpz2sfimscdlu