Drift–diffusion simulation of S-shaped current–voltage relations for organic semiconductor devices

Duy Hai Doan, Axel Fischer, Jürgen Fuhrmann, Annegret Glitzky, Matthias Liero
2020 Journal of Computational Electronics  
We present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature-dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques, we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative
more » ... gions of negative differential resistance, which were only recently observed experimentally. Publisher's Note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
doi:10.1007/s10825-020-01505-6 fatcat:kegceqkapjbshbpz2sfimscdlu