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Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate
Applied Physics Letters
Xuan, Y.; Pal, H.; and Lundstrom, Mark S., "Inversion capacitance-voltage studies on GaAs metal-oxidesemiconductor structure using transparent conducting oxide as metal gate" (2008). Department of Electrical and Computer Engineering Faculty Publications. Paper 132. http://dx. A systematic capacitance-voltage ͑C-V͒ study has been performed on GaAs metaloxide-semiconductor ͑MOS͒ structures with atomic-layer-deposited Al 2 O 3 as gate dielectrics and indium tin oxide ͑ITO͒ as the metal gate. Thedoi:10.1063/1.2953080 fatcat:obtgoqnnjffr7khbbpqgghbfgu