Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate

T. Yang, Y. Liu, P. D. Ye, Y. Xuan, H. Pal, M. S. Lundstrom
2008 Applied Physics Letters  
Xuan, Y.; Pal, H.; and Lundstrom, Mark S., "Inversion capacitance-voltage studies on GaAs metal-oxidesemiconductor structure using transparent conducting oxide as metal gate" (2008). Department of Electrical and Computer Engineering Faculty Publications. Paper 132. http://dx. A systematic capacitance-voltage ͑C-V͒ study has been performed on GaAs metaloxide-semiconductor ͑MOS͒ structures with atomic-layer-deposited Al 2 O 3 as gate dielectrics and indium tin oxide ͑ITO͒ as the metal gate. The
more » ... ansparent conducting ITO gate allows homogeneous photoillumination on the whole MOS capacitance area, such that one can easily observe the low-frequency ͑LF͒ C-V and quasistatic C-V of GaAs at room temperature. The semiconductor capacitance effect on GaAs MOS devices has also been identified and insightfully discussed based on the obtained LF C-V curves. The semiconductor capacitance effect becomes more important for devices with high-mobility channel materials and aggressively scaled high-k gate dielectrics.
doi:10.1063/1.2953080 fatcat:obtgoqnnjffr7khbbpqgghbfgu