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A careful analysis of 300 K near-band-edge luminescence from bulk CdTe and cadmium telluride films is made. It is shown that: (i) the observed difference in 300 K peak positions of the near-band-edge luminescence hν m in CdTe crystals and films, and (ii) the hν m shift to lower energies as the excitation intensity is increased, could not be satisfactory explained by an assumption that free excitons dominate in the formation of the above luminescence. So, the origin of 300 K near-band-edgedoi:10.15407/spqeo6.04.441 fatcat:mggt55ls6zgbtothukmd372scy