On the origin of 300 K near-band-edge luminescence in CdTe

K.D. Glinchuk, V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauki, 03028 Kyiv, Ukraine
2003 Semiconductor Physics, Quantum Electronics & Optoelectronics  
A careful analysis of 300 K near-band-edge luminescence from bulk CdTe and cadmium telluride films is made. It is shown that: (i) the observed difference in 300 K peak positions of the near-band-edge luminescence hν m in CdTe crystals and films, and (ii) the hν m shift to lower energies as the excitation intensity is increased, could not be satisfactory explained by an assumption that free excitons dominate in the formation of the above luminescence. So, the origin of 300 K near-band-edge
more » ... scence in CdTe is not mainly the free exciton one as was proposed earlier, and needs further examination.
doi:10.15407/spqeo6.04.441 fatcat:mggt55ls6zgbtothukmd372scy