Structural, Optical, and Electrical Properties of In2O3Thin Films Deposited on Various Buffer Layers
다양한 버퍼층 위에 증착한 In2O3박막의 구조, 광학 및 전기적 특성

Moon-Hwan Kim
2012 Journal of the Korean Institute of Electrical and Electronic Material Engineers  
The effects of various buffer layers on the In2O3 transparent conducting films grown on glass substrates by radio-frequency reactive magnetron sputtering were investigated. The In2O3 thin films were deposited at 400℃ of growth temperature and 100% of oxygen flow rate. The optical, electrical, and structural and morphological properties of the In2O3 thin films subjected to buffer layers were examined by using ultraviolet-visible spectrophotometer, Hall-effect measurements, and X-ray
more » ... X-ray diffractometer, respectively. The properties of In2O3 thin films showed different results, depending on the type of buffer layer. As for the In2O3 thin film deposited on ZnO buffer layer, the average transmittance was 89% and the electrical resistivity was 7.4×10 -3 Ωcm. The experimental results provide a way for growing the transparent conducting film with the optimum condition by using an appropriate buffer layer.
doi:10.4313/jkem.2012.25.7.491 fatcat:snbsp6egonb4papvvpt6fuvzyy