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Journal of Advances in Science and Engineering
This research work is focused on material science and semiconductor engineering. It emphasized on the semiconductor material such as Gallium arsenide (GaAs). The Gallium arsenide semiconductor material was used as a group III-V compound for metal-oxide semiconductor field effect transistor (MOSFET) modeling. The band-gap energy structures were analyzed by using material parameters such as Varshni parameters, temperature and doping concentrations. Then, an electrical characteristic was carrieddoi:10.37121/jase.v3i2.102 fatcat:7qrizxugfjenrkvbzmcpvurz2i