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Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as "ion-cut" or "Smart-Cut". It is worth investigating the exfoliation efficiency and residual lattice defects in H-implanted SiC before and after annealing. In the present paper, lattice damage in thedoi:10.3390/ma13245723 pmid:33333943 fatcat:x5nnbkyvmrgvriffsrbhj5lcea