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Empirical determination of the energy band gap narrowing in highly doped n+ silicon
2013
Journal of Applied Physics
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Highly doped regions in silicon devices should be analyzed using Fermi-Dirac statistics, taking into account energy band gap narrowing (BGN). An empirical expression for the BGN as a function of dopant concentration is derived here by matching the modeled and measured thermal recombination current densities J 0 of a broad range of n þ dopant concentration profiles prepared by phosphorus diffusion. The analysis is repeated with Boltzmann statistics in order to determine a second empirical
doi:10.1063/1.4816694
fatcat:ia4l2th3izas3a6olzpnquja2m