MRAM Co-designed Processing-in-Memory CNN Accelerator for Mobile and IoT Applications [article]

Baohua Sun, Daniel Liu, Leo Yu, Jay Li, Helen Liu, Wenhan Zhang, Terry Torng
2018 arXiv   pre-print
We designed a device for Convolution Neural Network applications with non-volatile MRAM memory and computing-in-memory co-designed architecture. It has been successfully fabricated using 22nm technology node CMOS Si process. More than 40MB MRAM density with 9.9TOPS/W are provided. It enables multiple models within one single chip for mobile and IoT device applications.
arXiv:1811.12179v1 fatcat:zbzwroyotffrrcjxpgnl5rwhxa