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Two-Qubit Conditional Phase Gate in Laser-Excited Semiconductor Quantum Dots Using the Quantum Zeno Effect

K. J. Xu, Y. P. Huang, M. G. Moore, C. Piermarocchi
2009 Physical Review Letters  

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We propose a scheme for a two-qubit conditional quantum Zeno phase gate for semiconductor quantum dots. The proposed system consists of two charged dots and one ancillary neutral dot driven by a laser pulse tuned to the exciton resonance. The primary decoherence mechanism is phonon-assisted exciton relaxation, which can be viewed as continuous monitoring by the environment. Because of the Zeno effect, a strong possibility of emission is sufficient to strongly modify the coherent dynamics, with
more » ... egligible probability of actual emission. We solve analytically the master equation and simulate the dynamics of the system using a realistic set of parameters. In contrast to standard schemes, larger phonon relaxation rates increase the fidelity of the operations.
doi:10.1103/physrevlett.103.037401 pmid:19659314 fatcat:qi5yoljeevainjkrawzc4quncu
Citation

K. J. Xu, Y. P. Huang, M. G. Moore, C. Piermarocchi. "Two-Qubit Conditional Phase Gate in Laser-Excited Semiconductor Quantum Dots Using the Quantum Zeno Effect." Physical Review Letters 103.3 (2009)