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Despite being an indirect bandgap material, germanium (Ge) recently appeared as a material of choice for low power consumption optical link on silicon. Thanks to a low energy difference between direct and indirect energy bandgap, optical transitions around the direct gap can be used to achieve strong electroabsorption or photodetection in a material already used in microelectronics circuits. However, many challenges have to be addressed such as the growth of germanium-rich structures on silicondoi:10.1515/nanoph-2013-0018 fatcat:6tdivjffvjat7llv5kzmwwrmvu