Characteristics of atomic layer deposited Gd2O3 on n-GaN with an AlN layer

Hogyoung Kim, Hee Ju Yun, Byung Joon Choi
2018 RSC Advances  
The interfacial and electrical properties of atomic layer deposited Gd2O3 with an AlN layer on n-GaN were investigated.
doi:10.1039/c8ra09708a fatcat:oy5dhh7meba3vgp5n3ywlz7eoi