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We report on a flat-top and ultrawide emission bandwidth of 125 nm from In-GaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple 1:2 AE 0:5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. Wedoi:10.1109/jphot.2015.2399442 fatcat:zeupsa25hbfjni7ozz6tvfjhwm