High-Power and High-Efficiency 1.3- $\mu\hbox{m} $ Superluminescent Diode With Flat-Top and Ultrawide Emission Bandwidth

M. Z. M. Khan, H. H. Alhashim, T. K. Ng, B. S. Ooi
2015 IEEE Photonics Journal  
We report on a flat-top and ultrawide emission bandwidth of 125 nm from In-GaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple 1:2 AE 0:5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. We
more » ... devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission. Index Terms: Multiple quantum-wells, superluminescent diode, high-power, broadband emission, inhomogeneous broadening.
doi:10.1109/jphot.2015.2399442 fatcat:zeupsa25hbfjni7ozz6tvfjhwm