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During the last decade, transition metal oxides have been actively investigated as hole-and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3) with high work functions (>5 eV) were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3−x was found to be dependent on film thickness anddoi:10.3390/app5040695 fatcat:dn6f6nkapfenhgi4xazm4jqyou