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Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature
1998
Applied Physics Letters
High-energy ͑1 MeV͒, ion irradiation of GeSi/Si strained layers at elevated temperatures can cause strain relaxation. This study examines the defects responsible for relaxation and for the evolution of the strain during subsequent annealing. Three distinct annealing stages are identified and correlated with the defect microstructure. In the temperature range from 350 to 600°C, a gradual recovery of strain is observed. This is shown to correlate with annealing of small defect clusters and the
doi:10.1063/1.122018
fatcat:s75n23njuzc5divpbh72lqerau