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Spatial distribution of optical properties of GaN layers grown on patterned Si (111) substrates by maskless metalorganic chemical vapor deposition has been investigated. The Si substrates were prepared with a pattern of 1.5 x m diameter holes at a 3.5 x m distance from each other. The holes were overgrown by GaN until coalescence, creating GaN areas with no substrate underneath. Microphotoluminescence mapping measurements with 0.8 xm lateral resolution show a five-fold increase in luminescencedoi:10.1063/1.2042546 fatcat:ty4kyjyidrebhf6mgax4b5i7iy