Terahertz detector with series connection of asymmetric gated transistors

D M Yermolaev, K M Marem'yanin, N A Maleev, V E Zemlyakov, V I Gavrilenko, V V Popov, S Yu Shapoval
2014 Journal of Physics, Conference Series  
To cite this article: D M Yermolaev et al 2014 J. Phys.: Conf. Ser. 486 012016 View the article online for updates and enhancements. Related content An ultra-fast data acquisition system for coherent synchrotron radiation with terahertz detectors M Caselle, M Balzer, S Chilingaryan et al. -Terahertz emission from asymmetric, doped quantum wells under resonant pumping Nathan Shammah, Chris C Phillips and Simone De Liberato -Moisture detection in composites by terahertz spectroscopy Pawe
more » ... scopy Pawe Malinowski, Norbert Paka, Szymon Opoka et al. -This content was downloaded from IP address 207.241.231.83 on 25/07 Abstract. Terahertz (THz) detection by a one-dimensional array of series connected fieldeffect transistors (FETs) is studied experimentally. Such terahertz detector demonstrates greatly enhanced voltaic responsivity up to 2 kV/W. Asymmetrical position of the gate contact in each FET in the array enables strong photovoltaic response.
doi:10.1088/1742-6596/486/1/012016 fatcat:46r44nwxxfhvrgdtascgglst6a