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Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonators
2014
Physical Review B
The damping rates of high quality factor nanomechanical resonators are well beyond intrinsic limits. Here, we explore the underlying microscopic loss mechanisms by investigating the temperature-dependent damping of the fundamental and third harmonic transverse flexural mode of a doubly clamped silicon nitride string. It exhibits characteristic maxima reminiscent of two-level defects typical for amorphous materials. Coupling to those defects relaxes the momentum selection rules, allowing energy
doi:10.1103/physrevb.89.100102
fatcat:ycqdw6s47vgxhcdecplyznj3ne