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We describe a simple but efficient technique to fabricate large-scale arrays of highly ordered silicon nanostructures. By coupling dual lithography using light of 351.1 nm wavelength with deep reactive ion etching (DRIE), silicon nanostructures of excellent regularity and uniform coverage were achieved. The proposed nanofabrication method not only simplified the nanofabrication process but also produced highaspect-ratio (higher than 15) nanostructures. The scalloping problem was also controlleddoi:10.1007/bf03353725 fatcat:jvdiszrsf5gghpoqvf2pblojxu