RECENT RESULTS IN THE THEORETICAL DESCRIPTION OF CL AND EBIC DEFECT CONTRASTS

S. HILDEBRANDT, J. SCHREIBER, W. HERGERT
1991 Journal de Physique IV : Proceedings  
The theoretical description used for the analysis of beam-voltage dependent CL and ERIC contrasts from a surface-parallel dislocation is summarized. The importance of the use of a realistic carrier generation model is discussed and suitable methods of the evaluation of defect parameters (depth position, dcfect strength) are proposed.
doi:10.1051/jp4:1991607 fatcat:5thprluhdza63hzadrse5g7wna