High-resistance low-doped GaAs and AlGaAs layers obtained by LPE

S.I. Krukovsky, SRC ", Karat", , 202 Stryiska st, 290031 Lviv, Ukraine
2003 Semiconductor Physics, Quantum Electronics & Optoelectronics  
doi:10.15407/spqeo6.01.055 fatcat:au7vtfk4sjcuxepu6do4fggsdi