Performance Evaluation of Ternary Content Addressable Memory and 3T-2R TCAM
International Journal for Research in Applied Science and Engineering Technology
The content addressable memory (CAM) is implementing the functionality of the lookup table in a one clock cycle. It is utilizing dedicated circuitry. Ternary content-addressable memories (TCAM) is operating at low power dissipation and fast data recovery. The CMOS based TCAMs provides, fast data access by storing information in the SRAM cell, but it consumes high leakage power. The memristors are replaced with the SRAM cell, it gives the best solution for decreases leakage power. It takes less
... wer. It takes less area compared to SRAM cell and also decreases the delay, stand by power of circuit and voltage swing at the matched line ML, by using a memristor device maximum power dissipation can be reduced along with area efficiency compared to Conventional TCAM. Here Comparison between NOR-type TCAM with memristor equivalent 3T-2R TCAM and PE TCAM is done in terms of power, area. The proposed design has 30% area efficiency and high-power consumptions compared to Conventional TCAM. Simulations are performed with the help of cadence software in 45nm technology. Keywords: Ternary Content addressable memory (TCAM), 3T-2R TCAM, PE TCAM. I.