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Micromachining Technology for Micro-Optics and Nano-Optics II
We report an alternative technique which utilizes fast proton or helium ion irradiation prior to electrochemical etching for three-dimensional micro-fabrication in bulk p-type silicon. The ion-induced damage increases the resistivity of the irradiated regions and slows down porous silicon formation. A raised structure of the scanned area is left behind after removal of the un-irradiated regions with potassium hydroxide. The thickness of the removed material depends on the irradiated dose atdoi:10.1117/12.524314 fatcat:ue2lo37p3bgx3gqn6sm4s3kn7e