Study of Degradation of Photovoltaic Cells Based on A3B5 Nanoheterostructures Under Ionizing Radiation
Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
2 Федеральное государственное унитарное предприятие «Научно−исследовательский институт приборов» (ФГУП «НИИП»), промзона Тураево, стр. 8, Лыткарино, Московская обл., 140080, Россия Известия высших учебных заведений. Материалы электронной техники. Abstract. Solar radiation is practically inexhaustible and environmentally friendly source of energy. Solar panels are classified as devices very sensitive to radiation. Therefore, the problem of creating radiation− resistant solar panels is quite
... anels is quite acute. In operation, solar batteries (SB) are exposed to hard corpuscular radiation (radiation belts, solar and cosmic radiation), resulting in the structure of accumulated violations leading to a gradual deterioration of their electrical characteristics. Conducted experimental studies of single−degradation characteristics of solar cells (SE) based on GaAs with Ge substrate due to the structural damage produced by irradiation with fast neutrons and electrons, step by irradiation with fast neutrons and electrons with different fluence. Before and after each set of neutron fluence and electrons were measured light current−voltage characteristics (CVC) and photosensitivity spectra of the AOC. Determined from the measured CVC following parameters: fault current circuit voltage with a maximum coefficient of performance (COP) (ratio of maximum power to the product of the flux density of solar energy and the cell area), fill factor (the ratio of maximum power to the product of the short−circuit current and voltage idling).