This paper presents new structure and method of charge modulation fbr CMOS time − of − flight range image sensor using pinned photodiodes . Proposed pixel stmcture allows us to achieve high − speed charge transfer by generating lateral electric field 仕om the light receiving part to charge accumulating part . And this proposed TOF range sensor demodulates photoelectrons generated PPD by using draining gate only and do not use transfer gate f()r the charge modula 廿on , therefbre , it can reduce the noise that is caused by a transfer gate .