Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm

Matthew Streshinsky, Ran Ding, Yang Liu, Ari Novack, Yisu Yang, Yangjin Ma, Xiaoguang Tu, Edward Koh Sing Chee, Andy Eu-Jin Lim, Patrick Guo-Qiang Lo, Tom Baehr-Jones, Michael Hochberg
2013 Optics Express  
The wavelength band near 1300 nm is attractive for many telecommunications applications, yet there are few results in silicon that demonstrate high-speed modulation in this band. We present the first silicon modulator to operate at 50 Gbps near 1300 nm. We demonstrate an open eye at this speed using a differential 1.5 V pp signal at 0 V reverse bias, achieving an energy efficiency of 450 fJ/bit.
doi:10.1364/oe.21.030350 pmid:24514613 fatcat:gzs2tkho3bhclesrkym4fughkm