Stability of diamond/Si bonding interface during device fabrication process

Jianbo Liang, Satoshi Masuya, Seongwoo Kim, Toshiyuki Oishi, Makoto Kasu, Naoteru Shigekawa
2018 Applied Physics Express  
Diamond/Si bonding interface with an entire contact area and high thermal stability is achieved by surface activated bonding method. The fabrication of diamond field-effect transistors (FETs) on the diamond bonded to Si is demonstrated. The FET exhibits clear saturation and pinch-off characteristics. A 5-nm-thick SixCx-1 layer was formed at the interface with annealing at 1000 °C. The layer was formed by the inter-diffusion of carbon and Si atoms near the bonding interface, which plays a role
more » ... hich plays a role of residual stress relaxation between diamond and Si. These results suggest that diamond/Si heterostructures are applicable for combining diamond devices with Si LSI. *
doi:10.7567/1882-0786/aaeedd fatcat:263s4wsl55eapplusfdlmz4hwm