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Using density functional (DF) calculations and Monte Carlo (MC) simulations we have investigated the main electronic and structural properties of silicon interacting with single walled carbon nanotubes. We have investigated the silicon adsorption externally and internally in the nanotubes surface. The total energies calculations and charge density plot present that the adsorption is most stable externally with silicon forming four bonds with the C atoms and the Si-C bond distances are similardoi:10.1590/s0103-97332006000600023 fatcat:lifurwl5mrhzbkd2anoplykxcm