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The pa per in ves ti gates a pos si bil ity of pMOS do sim e ter re-use for the mea sure ment of gamma-ray ir ra di a tion. The do sim e ters were ir ra di ated to the dose of 35 Gy, an nealed at room and el e vated tem per a tures, af ter which they were ir ra di ated again to the same dose value. Changes in the thresh old volt age shift dur ing those pro cesses were fol lowed, and it was shown that their re-use de pends on a gate po lar iza tion dur ing ir ra di a tion. For the gate po larizadoi:10.2298/ntrp1204341p fatcat:tbvhcn4k3fdltix77tmwdchy7u