Successive gamma-ray irradiation and corresponding post-irradiation annealing of pMOS dosimeters

Milic Pejovic, Momcilo Pejovic, Aleksandar Jaksic, Koviljka Stankovic, Slavoljub Markovic
2012 Nuclear Technology and Radiation Protection  
The pa per in ves ti gates a pos si bil ity of pMOS do sim e ter re-use for the mea sure ment of gamma-ray ir ra di a tion. The do sim e ters were ir ra di ated to the dose of 35 Gy, an nealed at room and el e vated tem per a tures, af ter which they were ir ra di ated again to the same dose value. Changes in the thresh old volt age shift dur ing those pro cesses were fol lowed, and it was shown that their re-use de pends on a gate po lar iza tion dur ing ir ra di a tion. For the gate po lariza
more » ... the gate po lariza tion of 5 V dur ing ir ra di a tion the pMOS do sim e ters can be re-used for mea sure ments of the ir ra di a tion dose af ter an neal ing with out prior cal i bra tion. The pMOS do sim e ters with the gate po lar iza tion dur ing ir ra di a tion of 2.5 V can also be re-used for ir ra di a tion dose mea surements but they re quire cal i bra tion. It is shown that for their re-use it is nec es sary to an neal the pMOS do sim e ter so that the fad ing is higher than 50%. Key words: pMOS do sim e ter, gamma-ray ir ra di a tion, thresh old volt age shift, ab sorbed dose
doi:10.2298/ntrp1204341p fatcat:tbvhcn4k3fdltix77tmwdchy7u