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0.7–2.7 GHz wideband CMOS low-noise amplifier for LTE application
2013
Electronics Letters
A wideband low-noise amplifier (LNA) for long-term evolution applications is presented. A capacitive cross-coupled common-gate in combination with current-bleeding common-source topologies is adopted for wideband input matching, high gain and low noise figure (NF). Inter-cascade inductors are adopted to cancel the inter-stage parasitics, which extend input matching and operational bandwidth to higher frequency with additional NF reduction. Implemented in a 0.18 µm CMOS technology, the proposed
doi:10.1049/el.2013.3103
fatcat:aknitmcv6ra6vpcu44kaeexfrm