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A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating the tail current and reducing the turn-off loss. According to the simulation results, with a relative permittivity of 475 and a 400 nm thickness for the HKF, the proposed device obtains a 62% reduction in the turn-off loss compared to adoi:10.1109/jeds.2020.3025220 fatcat:ufahv6wcmbbbnethwgo3mfal5i