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The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 10 14 to 3.6 × 10 15 cm −3 , together with one hole trap withdoi:10.3390/electronics4041090 fatcat:7kfm2yigvbdmjahldigxsmhci4