Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation

Sofiane Belahsene, Noor Al Saqri, Dler Jameel, Abdelmadjid Mesli, Anthony Martinez, Jacques de Sanoit, Abdallah Ougazzaden, Jean Salvestrini, Abderrahim Ramdane, Mohamed Henini
2015 Electronics  
The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 10 14 to 3.6 × 10 15 cm −3 , together with one hole trap with
more » ... hole trap with energy depth of 0.83 eV and concentration of 8 × 10 14 cm −3 . It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction.
doi:10.3390/electronics4041090 fatcat:7kfm2yigvbdmjahldigxsmhci4