Broad optical bandwidth InGaAs-InAlGaAs light-emitting diodes fabricated using a laser annealing process

S.D. McDougall, O.P. Kowalski, J.H. Marsh, J.S. Aitchison
1999 IEEE Photonics Technology Letters  
The use of a laser-induced quantum-well intermixing technique in the InGaAs-InAlGaAs material system is presented. We report blue shifts of up to 240 nm in the 1.55-m emission wavelength, generated by exposure to a Nd:YAG laser. Variations in the optical intensity across the irradiating beam were used to laterally grade the bandgap along a sample. We used this technique to fabricate broad optical bandwidth, light-emitting diodes. The devices showed an increase in the full width half maximum of
more » ... th half maximum of the emission spectrum from 125 nm in undisordered devices to over 260 nm in intermixed material. The output spectrum was also observed to be flat-topped (within 5%) across a wavelength range of 140 nm.
doi:10.1109/68.806845 fatcat:m5pcvvmnerho7lfln3qvwjpsf4