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This paper studies the harmonic distortion (or non-linearity) of vertically stacked SOI nanosheets with different fin widths and channel lengths. The total harmonic distortion and third order harmonic distortion are used as figures of merit in this work. The four approaches applied verifies the correlation between the harmonic distortions and the variety of transistor's dimensions available for analysis.doi:10.29292/jics.v15i2.202 fatcat:55srrr4wsrhuneyrhymfxywwvq