A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is application/pdf.
Control of grain-boundary tunneling barriers in polycrystalline silicon
2002
Applied Physics Letters
Preserved Fulltext
The effect of oxidation and annealing on the electrical properties of grain boundaries ͑GBs͒ in heavily doped polycrystalline silicon is characterized using bulk films and 30-nm-wide nanowires. Oxidation at 650-750°C selectively oxidizes the GBs. Subsequent annealing at 1000°C increases the associated potential barrier height and resistance. These observations can be explained by structural changes in the Si-O network at the GBs and the competition between surface oxygen diffusion and oxidation
doi:10.1063/1.1509853
fatcat:32rjruotpjahbgwce7qzktqyvi